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ATP206
Note on usage : Since the ATP206 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1395-7/7
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相关PDF资料
ATP207-TL-H MOSFET N-CH 40V 65A ATPAK
ATP208-TL-H MOSFET N-CH 40V 90A ATPAK
ATP212-TL-H MOSFET N-CH 60V 35A ATPAK
ATP213-TL-H MOSFET N-CH 60V 50A ATPAK
ATP214-TL-H MOSFET N-CH 60V 75A ATPAK
ATP216-TL-H MOSFET N-CH 50V 35A ATPAK
ATP218-TL-H MOSFET N-CH 30V 100A ATPAK
ATP301-TL-H MOSFET P-CH 100V 28A ATPAK
相关代理商/技术参数
ATP207 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ATP207_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP207-S-TL-H 功能描述:MOSFET N-CH 40V 65A ATPAK 制造商:on semiconductor 系列:- 包装:带卷（TR） 零件状态:上次购买时间 FET 类型:- FET 功能:- 漏源极电压（Vdss）:- 电流 - 连续漏极（Id）（25°C 时）:- 不同?Id，Vgs 时的?Rds On（最大值）:- 不同 Id 时的 Vgs（th）（最大值）:- 不同 Vgs 时的栅极电荷（Qg）:- 不同 Vds 时的输入电容（Ciss）:- 功率 - 最大值:- 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:ATPAK（2 引线 + 接片） 供应商器件封装:ATPAK 标准包装:3,000
ATP207-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ATP208 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP208_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP208-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ATP20ASM 制造商:CTS Corporation 功能描述: